AP40T03GJ-HF - Advanced Power Electronics

AP40T03GJ-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP40T03 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 package is widely preferred for all commercial-industrial surface mount applicat.

Features

25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range 30 +25 28 18 95 31.25 -55 to 150 -55 to 150 V V A A A W ℃ ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount)3 Rthj-a Maximum Thermal Resistance, Junction-ambient Value 4 62.5 110 Units ℃/W ℃/W ℃/W Data and specifications subject to change without notice 1 201409017 AP40T03GH/J.