AP4002T-HF - Advanced Power Electronics

AP4002T-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The TO-92 package is widely used for commercial-industrial applications. TO-92 D S G Absolute Maximum Ratings Symbol VDS VGS ID@TL=25℃ IDM PD@TL=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Ga.

Features

Thermal Resistance, Junction-ambient Maximum Thermal Resistance, Junction-lead Value 150 60 Unit ℃/W ℃/W Data & specifications subject to change without notice 1 200807312 AP4002T-HF Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 3 3 o Test Conditions VGS=0V, ID=1mA VGS=10V, ID=400mA VDS=VGS, ID=25.