G D Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness device. The TO-252/TO-251 package is universally used for all commercialindustrial application. G D S S TO-252(H) TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TS.
e Thermal Resistance Junction-ambient Max. Max. Value 3.4 110 Unit ℃/W ℃/W Data and specifications subject to change without notice 200505031 Downloaded from Elcodis.com electronic components distributor AP3403GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=-250uA Min. -30 -1 - Typ. -0.1 Max. Units 200 400 -3 -1 -25 ±100 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA RDS(ON) Static Drain-Source .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AP3403GJ |
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
2 | AP3403 |
Diodes |
600mA STEP-DOWN DC/DC CONVERTER | |
3 | AP3401 |
Diodes |
1A STEP-DOWN DC - DC BUCK CONVERTER | |
4 | AP3402 |
Diodes |
2A STEP-DOWN DC-DC BUCK CONVERTER | |
5 | AP3402GEH |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
6 | AP3402GEJ |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
7 | AP3405 |
Diodes |
600mA Step-down DC/DC Converter | |
8 | AP3405GH-HF |
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
9 | AP3406 |
BCD Semiconductor |
650mA SYNCHRONOUS DC-DC BUCK CONVERTER | |
10 | AP34063 |
Diodes Incorporated |
UNIVERSAL DC/DC CONVERTER | |
11 | AP34063 |
Anachip |
Universal DC/DC Converter | |
12 | AP3406A |
BCD Semiconductor |
1.1MHz 800mA SYNCHRONOUS DC-DC BUCK CONVERTER |