Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP30P10GI-HF-3 is in the TO-220CFM package, which is widely used for commercial and industrial applications, where a low PCB footprint and/or isolated tab mounting is required. G D S TO-220CFM (I) Absolute Maxim.
thj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 4 65 Units °C/W °C/W Ordering Information AP30P10GI-HF-3TR RoHS-compliant, halogen-free TO-220CFM, shipped in tubes. ©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com 200812232-3 1/5 Advanced Power Electronics Corp. Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 AP30P10GI-HF-3 Test Conditions VGS=0V, ID=-250uA VGS=-10V, ID=-12A VGS=-4.5V, ID=-8A .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AP30P10GI |
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
2 | AP30P10GH-HF |
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
3 | AP30P10GP-HF |
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
4 | AP30P10GP-HF-3 |
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
5 | AP30P10GS |
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
6 | AP30P10GS-HF |
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
7 | AP30P10GS-HF-3 |
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
8 | AP3000 |
APTech |
1/4 INCH DIAPHRAGM VALVE | |
9 | AP3000A-00 |
ASI |
SILICON PIN DIODE CHIP | |
10 | AP3000C-11 |
ASI |
SILICON PIN DIODE | |
11 | AP3001 |
BCD Semiconductor |
PWM BUCK DC-DC CONVERTER | |
12 | AP3002 |
APTech |
1/4 INCH DIAPHRAGM VALVE |