AP2900EC4 - Advanced Power Electronics

AP2900EC4 DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP2900 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for the load switch, charge switch, battery switch for portable application. WLCSP 4 ball 1. 59mm + 0.02mm 0.65mm . 1.59mm ± 0. 02mm T.

Features

to 150 A A W ℃ ℃ Data and specifications subject to change without notice 1 201502241 AP2900EC4 Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units V(BR)SSS RSS(ON) VGS(off) yfs ISSS IGSS td(on) tr td(off) tf Qg VF(S-S) Source-Source Breakdown Voltage VGS=0V, IS=1mA Static Source-Source On-Resistance2 VGS=4.5V, IS=3A VGS=4V, IS=3A VGS=3.7V, IS=3A Cutoff Voltage Forward Transfer Admittance Zero Gate Voltage Source Current Gate-Source Leakage Current Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time VGS=3.1V,.