AP2305CGN-HF - Advanced Power Electronics

AP2305CGN-HF P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,low on-resistance and costeffectiveness. The SOT-23 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ .

Features

ata Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 90 Unit ℃/W 1 201101101 Data and specifications subject to change without notice AP2305CGN-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=-250uA VGS=-10V, ID=-3.2A VGS=-4.5V, ID=-3.0A VGS=-2.5V, ID=-2.0A Min. -30 -0.5 - Typ. 10.6 11 1.5 4 7 7 35 9 850 90 80 Max. Units 75 85 120 -1.2 -1 +100 17.6 1360 V mΩ mΩ mΩ V S uA nA nC nC nC ns ns ns ns pF pF pF VGS(th) gfs I.