AP18N20GH-HF - Advanced Power Electronics

AP18N20GH-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP18N.

Features

its V V A A A W W/ ℃ W ℃ ℃ Total Power Dissipation Linear Derating Factor Total Power Dissipation 3 2 -55 to 150 -55 to 150 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 Value 1.4 62.5 110 Unit ℃/W ℃/W ℃/W 1 201006224 Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice AP18N20GH/J-HF Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj o.