AP1332GEU-HF - Advanced Power Electronics

AP1332GEU-HF N-channel Enhancement mode Power MOSFET

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and costeffectiveness. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 R.

Features

AP1332GEU-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj RDS(ON) Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA 2 Min. 20 0.5 - Typ. 0.02 1 1.3 0.3 0.5 21 53 100 125 38 17 12 Max. 600 2 1.25 1 10 +30 2 60 - Unit V V/℃ mΩ Ω V S uA uA uA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA Static Drain-Source On-Resistance VGS=4.5V, ID=600mA VGS=2.5V, ID=300mA VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductanc.