AP0603GMA - Advanced Power Electronics

AP0603GMA N-CHANNEL ENHANCEMENT MODE POWER MOSFET

S D The APAK-5 package is preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. SS S G APAK-5 Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Con.

Features

Junction-case Thermal Resistance Junction-ambient 3 Value Max. Max. 2 85 Units ℃/W ℃/W Data & specifications subject to change without notice 200401053-1/4 AP0603GMA Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 30 1 - Typ. 0.018 32 33 7.5 24 11.2 77 35 67 550 380 1.9 Max. Units 6 10 3 1 500 ±100 52 2.8 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) Static Drain-Source On-Resist.