AOY66620 - Alpha & Omega Semiconductors

AOY66620 60V N-Channel MOSFET

• Trench Power MOSFET technology • Low RDS(ON) • Excellent Gate Charge x RDS(ON) Product(FOM) • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=8V) 60V 58A < 8.5mΩ < 11mΩ Applications • Synchronous Rectification in SMPS • ATX and Gaming Power Supplies • Switching Applications 100% UIS Tested 100% R.

Features

nd Storage Temperature Range TJ, TSTG Maximum 60 ±20 58 37 125 20 16 20 60 52 21 6.2 4.0 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D t ≤ 10s Steady-State RqJA 15 40 Maximum Junction-to-Case Steady-State RqJC 1.9 Max 20 50 2.4 Units °C/W °C/W °C/W Rev 1.2: March 2024 www.aosmd.com Page 1 of 6 AOY66620 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V 60 ID.