• Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V Applications • SMPS with PFC, Flyback and LLC topologies • Silver ATX ,adapter, TV, lighting, Server power 100% UIS Tested .
W) MOSFET dv/dt ruggedness Peak diode recovery dv/dt
VGS ID
IDM IAR EAR
EAS dv/dt
Power Dissipation B
TC=25°C Derate above 25°C
PD
Junction and Storage Temperature Range
Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds
TJ, TSTG TL
Maximum 600 ±20 ±30 11
* 7.2
* 44 2.5 3.1
210 100 20 25 0.2 -55 to 150
300
Units V V V
A
A mJ
mJ V/ns
W W/°C
°C
°C
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A,D
Symbol RqJA
Maximum Junction-to-Case
RqJC
* Drain current limited by maximum junction temperature.
Maximum 65 5.0
Units °C/W °C/W
Rev.2.1: Februa.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AOWF360A70 |
Alpha & Omega Semiconductors |
700V N-Channel Power Transistor | |
2 | AOWF095A60 |
Alpha & Omega Semiconductors |
600V N-Channel Power Transistor | |
3 | AOWF10N60 |
Alpha & Omega Semiconductors |
10A N-Channel MOSFET | |
4 | AOWF10N65 |
Alpha & Omega Semiconductors |
10A N-Channel MOSFET | |
5 | AOWF11S60 |
Alpha & Omega Semiconductors |
Power Transistor | |
6 | AOWF11S65 |
Alpha & Omega Semiconductors |
Power Transistor | |
7 | AOWF125A60 |
Alpha & Omega Semiconductors |
N-Channel Power Transistor | |
8 | AOWF12N50 |
Alpha & Omega Semiconductors |
12A N-Channel MOSFET | |
9 | AOWF12N60 |
Alpha & Omega Semiconductors |
12A N-Channel MOSFET | |
10 | AOWF12N65 |
Alpha & Omega Semiconductors |
12A N-Channel MOSFET | |
11 | AOWF14N50 |
Alpha & Omega Semiconductors |
14A N-Channel MOSFET | |
12 | AOWF15S60 |
Alpha & Omega Semiconductors |
POWER Transistor |