AOW482 - Alpha & Omega Semiconductors

AOW482 80V N-Channel MOSFET

Product Summary The AOW482 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON).

Features

Maximum 80 ±25 105 82 330 11 9 82 336 333 167 2.1 1.3 -55 to 175 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ 11 47 0.36 Max 15 60 0.45 Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev1.0: February 2024 www.aosmd.com Page 1 of 7 AOW482 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 80 V IDSS Zero Gate Voltage D.