AOW360A70 - Alpha & Omega Semiconductors

AOW360A70 700V N-Channel Power Transistor

• Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V Applications • Flyback for SMPS • Charger ,PD Adapter, TV, lighting. 100% UIS Tested 100% Rg Tested TO-262 Top View Bott.

Features

alanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt VDS VGS VGS ID IDM IAR EAR EAS dv/dt 700 ±20 ±30 12 7.6 48 3.4 5.8 50 100 20 TC=25°C Power Dissipation B Derate above 25°C PD 156 1.25 AOWF360A70 12
* 7.6
* 29.5 0.23 Units V V V A A mJ mJ V/ns W W/°C Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TL 300 °C Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A,D RqJA Maximum Case-to-sink A RqCS Maximum Junction-to-Case RqJC
* Drain current limite.