AOU412 - Alpha & Omega Semiconductors

AOU412 N-Channel MOSFET

The AOU412 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. Standard Product AOU412 is Pb-free (meets ROHS & Sony 259 specifications). AOU412L is a Green Product ordering option. AOU412 and AOU412L are electrically id.

Features

VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 7.5mΩ (VGS = 10V) RDS(ON) < 11mΩ (VGS = 4.5V) G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current C Avalanche Current Repetitive avalanche energy L=0.1mH TC=25°C Power Dissipation B C Maximum 30 ±20 85 65 200 30 120 100 50 -55 to 175 Units V V A A mJ W °C TC=25°C G TC=100°C B ID IDM IAR EAR PD TJ, TSTG TC=100°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambien.