AOTL130A60FD - Alpha & Omega Semiconductors

AOTL130A60FD N-Channel Power Transistor

• Proprietary αMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery • RoHS 2.0 and Halogen-Free Compliant Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V Applications • PWM stages (LLC, PSFB,TTF) of Server, Telecom, Industrial, UPS, and Sol.

Features

VGS ID IDM IAR EAR EAS dv/dt VDS=0 to 400V,IF=20A,Tj=25°C di/dt TC=25°C Power Dissipation B Derate above 25°C PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL Maximum 600 ±20 28 17 112 7.9 31 555 100 20 1000 277 2.2 -55 to 150 300 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A,D Maximum Junction-to-Case Symbol t ≤ 10s Steady-State RqJA RqJC Typical 10 40 0.34 Maximum 15 50 0.45 Units V V A A mJ mJ V/ns V/ns A/ns W W/°C °C °C Units °C/W °C/W °C/W Rev..