AOTF125A60FDL - Alpha & Omega Semiconductors

AOTF125A60FDL N-Channel Power Transistor

Product Summary • Proprietary αMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery • RoHS 2.0 and Halogen-Free Compliant VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V Applications • PWM stages (LLC, PSFB,TTF) of Server, Telecom, Industrial, UPS, and S.

Features

eovery dv/dt dv/dt TC=25°C Power Dissipation B Derate above 25°C PD Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TL Maximum 600 ±20 14 8 56 7.9 31 555 100 20 52 0.4 -55 to 150 300 Units V V A A mJ mJ V/ns V/ns W W/°C °C °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Junction-to-Case Symbol RqJA RqJC Maximum 65 2.4 Units °C/W °C/W Rev.1.1: June 2024 www.aosmd.com Page 1 of 6 AOTF125A60FDL Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Co.