AOT8B65M3 - Alpha & Omega Semiconductors

AOT8B65M3 8A Alpha IGBT

• Latest AlphaIGBT (αIGBT) technology • 650V breakdown voltage • Very fast and soft recovery freewheeling diode • High efficient turn-on di/dt controllability • Low VCE(sat) enables high efficiencies • Low turn-off switching loss and softness • Very good EMI behavior • High short-circuit ruggedness Applications • Motor drives • Home appliance applications su.

Features

Collector Current, Limited by TJmax ICM 24 A Turn off SOA, VCE≤650V, Limited by TJmax ILM 24 A Continuous Diode Forward Current TC=25°C TC=100°C IF 10 A 5 Diode Pulsed Current, Limited by TJmax IFM 15 A Short Circuit Withstanding Time (1) VGE=15V, VCC≤400V, TJ≤175°C tSC 5 ms Power Dissipation TC=25°C TC=100°C PD 83 W 42 Junction and Storage Temperature Range TJ, TSTG -55 to 175 °C Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TL 300 °C Thermal Characteristics Parameter Symbol AOT8B65M3 Units Maximum Junction-to-Ambient RqJ.