• Latest AlphaIGBT (αIGBT) Technology • 650V Breakdown voltage • Very fast and soft recovery freewheeling diode • High efficient Turn-On di/dt controllability • Low VCE(sat) enables high efficiencies • Low Turn-Off switching loss and softness • Very good EMI behavior • High short-circuit ruggedness Applications • Motor drives • Sewing machines • Home applian.
y TJmax ICM 45 A Turn off SOA, VCE≤650V, Limited by TJmax ILM 45 A Continuous Diode Forward Current TC=25°C TC=100°C IF 20 A 10 Diode Pulsed Current, Limited by TJmax IFM 30 A Short circuit withstanding time (1) VGE=15V, VCC≤400V, TJ≤175°C tSC 5 ms Power Dissipation TC=25°C TC=100°C PD 150 W 75 Junction and Storage Temperature Range TJ, TSTG -55 to 175 °C Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TL 300 °C Thermal Characteristics Parameter Symbol AOT15B65M3 Units Maximum Junction-to-Ambient RqJA 65 Maximum IGBT Junction.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AOT15B65M1 |
Alpha & Omega Semiconductors |
650V 15A IGBT | |
2 | AOT15B65MQ1 |
Alpha & Omega Semiconductors |
650V 15A IGBT | |
3 | AOT15B60D |
Alpha & Omega Semiconductors |
15A IGBT | |
4 | AOT15S60 |
Freescale |
Power Transistor | |
5 | AOT15S60 |
Alpha & Omega Semiconductors |
Power Transistor | |
6 | AOT15S60 |
INCHANGE |
N-Channel MOSFET | |
7 | AOT15S60L |
Alpha & Omega Semiconductors |
Power Transistor | |
8 | AOT15S60L |
INCHANGE |
N-Channel MOSFET | |
9 | AOT15S65 |
Freescale |
Power Transistor | |
10 | AOT15S65 |
Alpha & Omega Semiconductors |
Power Transistor | |
11 | AOT15S65 |
INCHANGE |
N-Channel MOSFET | |
12 | AOT15S65L |
INCHANGE |
N-Channel MOSFET |