AONX36320 - Alpha & Omega Semiconductors

AONX36320 30V Dual Asymmetric N-Channel MOSFET

• Bottom Source Technology • Very Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS 2.0 and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Q1 Q2 30V 30V 22A 85A < 4.25mΩ < 0.82mΩ < 6.95mΩ < 1.04mΩ Applications • DC/DC Converters in Computing, Servers, and POL • Non-Isolated DC/DC C.

Features

nergy L=0.01mH C EAS VDS Spike Power Dissipation B 10μs TC=25°C TC=100°C VSPIKE PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Max Q1 Max Q2 30 30 ±20 ±12 22 85 22 85 88 340 22 G 60 19 48 50 80 13 32 36 36 24 75 9.6 30 4.1 5 2.6 3.2 -55 to 150 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case (Note) Note: Bottom S2, D1. t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ Q1 23 45 4 Typ Q2 Max Q1 20 30 .