AONS62814T - Alpha & Omega Semiconductors

AONS62814T 80V N-Channel MOSFET

• Trench Power AlphaSGTTM technology • Low RDS(ON) • Low Gate Charge • Low Eoss Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6V) 80V 100A < 2.6mΩ < 3.5mΩ Applications • Secondary Synchronous Rectification MOSFET for Server and Telecom 100% UIS Tested 100% Rg Tested Max Tj=175°C Top View DFN5x6 Bottom View PIN1 Orderable Par.

Features

TSTG Maximum 80 ±20 100 100 372 40 33 73 266 258 129 8.8 6.1 -55 to 175 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ 14 40 0.43 Max 17 50 0.58 Units °C/W °C/W °C/W Rev.1.0: October 2020 www.aosmd.com Page 1 of 6 AONS62814T Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 80 IDSS Zero Gate Voltage Drain Cu.