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Isc N-Channel MOSFET Transistor ·FEATURES ·With To-251(IPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain.
·With To-251(IPAK) package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
100
V
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous@Tc=25℃ Tc=100℃
Drain Current-Single Pulsed
±20
V
14 10
A
25
A
PD
Total Dissipation @TC=25℃
30
W
Tch
Max. Operating Junction Temperature
175
℃
Tstg
Storage Temperature
-55~175 ℃
·THER.
AOI4286 - Alpha & Omega Semiconductors
Product Summary The AOD4286, AOI4286 uses trench MOSFET technology that is uniquely optimized to provide the most effi.
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