AOD456 - Alpha & Omega Semiconductors

AOD456 N-Channel MOSFET

The AOD456 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOD456 is Pb-free (meets ROHS & Sony 259 specifications). AOD456L is a Green Product ordering option. AOD456 and AOD456L are electrically identical. .

Features

VDS (V) = 25V ID = 50A (VGS = 10V) RDS(ON) <6 mΩ (VGS = 10V) RDS(ON) <10 mΩ (VGS = 4.5V) 193 18 D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C C C Maximum 25 ±20 50 50 150 30 45 50 25 3 2.1 -55 to 175 Units V V A A mJ W W °C TC=25°C TC=100°C ID IDM IAR EAR PD PDSM TJ, TSTG TC=25°C Repetitive avalanche energy L=0.1mH Power Dissipation B Power Dissipation A TC=100°C TA=25°C TA=70°C Junction and Storag.