isc N-Channel MOSFET Transistor AOD442 ·FEATURES ·Drain Current –ID= 37A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 20mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Be suitable for synchronous rectification for server and ge.
·Drain Current
–ID= 37A@ TC=25℃
·Drain Source Voltage-
: VDSS= 60V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 20mΩ(Max)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Be suitable for synchronous rectification for server and
general purpose applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-Continuous
37
A
IDM
Drain Current-Single Pulsed
60
A
PD
Total Dissipation @TC=25℃
60
W
Tj
Max. Op.
Product Summary The AOD442/AOI442 used advanced trench technology to provide excellent RDS(ON) and low gate charge. Th.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AOD442G |
INCHANGE |
N-Channel MOSFET | |
2 | AOD442G |
Alpha & Omega Semiconductors |
N-Channel MOSFET | |
3 | AOD444 |
Alpha & Omega Semiconductors |
60V N-Channel MOSFET | |
4 | AOD444 |
INCHANGE |
N-Channel MOSFET | |
5 | AOD4454 |
Alpha & Omega Semiconductors |
150V N-Channel MOSFET | |
6 | AOD4454 |
INCHANGE |
N-Channel MOSFET | |
7 | AOD446 |
Alpha & Omega Semiconductors |
N-Channel MOSFET | |
8 | AOD446 |
INCHANGE |
N-Channel MOSFET | |
9 | AOD448 |
Alpha & Omega Semiconductors |
N-Channel MOSFET | |
10 | AOD400 |
Alpha & Omega Semiconductors |
N-Channel MOSFET | |
11 | AOD402 |
Alpha & Omega Semiconductors |
N-Channel MOSFET | |
12 | AOD403 |
VBsemi |
P-Channel MOSFET |