AOB42S60L - Alpha & Omega Semiconductors

AOB42S60L 600V Power Transistor

Product Summary The AOT42S60L & AOB42S60L have been fabricated using the advanced aMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these devices can be adopted quickly into new and existing offline pow.

Features

d Drain Current C IDM Avalanche Current C IAR Repetitive avalanche energy C EAR Single pulsed avalanche energy G EAS 37 23 166 11 234 1345 TC=25°C Power Dissipation B Derate above 25oC PD 417 3.3 MOSFET dv/dt ruggedness Peak diode recovery dv/dt H dv/dt 100 20 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J TL 300 Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RqJA RqCS AOT42S60L/AOB42S60L 65 0.5 Maximum Junction-to-Case RqJC 0.3.