AOB380A60L - Alpha & Omega Semiconductors

AOB380A60L N-Channel Power Transistor

• Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery Applications • SMPS with PFC, Flyback and LLC topologies • Silver ATX ,adapter, TV, lighting, Server power TO-220 TO-220F Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 1.

Features

VGS=10V, IL=2Apk, L=105mH, RGS=25W) MOSFET dv/dt ruggedness Peak diode recovery dv/dt Power Dissipation B TC=25°C Derate above 25°C VDS VGS VGS ID IDM IAR EAR EAS dv/dt PD Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TL Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Maximum Junction-to-Case
* Drain current limited by maximum junction temperature. Symbol RqJA RqCS RqJC S G AOB380A60L Form Tube Tube Tape and reel G S Minimum Order Quantity 1000 1000 800 AOT(B).