AO7401 - Alpha & Omega Semiconductors

AO7401 P-Channel MOSFET

The AO7401 uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 2.5V, in the small SOT363 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low current DC-DC converters. Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10.

Features

bient A D Maximum Junction-to-Lead Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 300 340 280 Max 360 425 320 Units ° C/W ° C/W ° C/W Rev 6: June 2011 www.aosmd.com Page 1 of 5 Free Datasheet http://www.datasheet4u.com/ AO7401 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-30V, VGS=0V C TJ=55° VDS=0V, VGS= ±12V VDS=VGS ID=-250µA VGS=-10V, VDS=-5V VGS=-10V, ID=-1.4A RDS(ON) Static Drain-Source On-Resistance TJ=125° C VGS=-4.5V, ID=-1.2A VGS=-2.5V, ID=-1A gFS VSD IS Forward Transconductance Diode Forward Voltage .