AO4818B - Alpha & Omega Semiconductors

AO4818B 30V Dual N-channel MOSFET

The AO4818B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) ESD Protected 100% UIS Tested 100% Rg Tested 30V 8A <19mW < 26mW SOIC-8 Top View Bottom View Top View S2 1.

Features

D Steady-State RqJA 48 74 Maximum Junction-to-Lead Steady-State RqJL 32 Max 62.5 90 40 D S Units V V A A mJ W °C Units °C/W °C/W °C/W Rev 4.1: March 2024 www.aosmd.com Page 1 of 6 AO4818B Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 30 V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C 1 mA 5 IGSS Gate-Body leakage current VDS=0V, VGS=±20V 10 mA VGS(th) Gate Threshold Voltage VDS=VGS ID=250mA 1.2 1.8 2.4 V ID(ON) O.