AN7332 - Intersil Corporation

AN7332 Field-Effect Transistors

The Application Of Conductivity-Modulated Field-Effect Transistors Application Note May 1992 AN7332.1 Summary The development of conductivity-modulated field-effect transistors, FETs, makes available to the system designer another solid-state device that can be used to implement power switching control. This paper reviews differences between the standard and.

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increases, the likelihood of a defect resulting in a nonfunctional part increases exponentially. This tendency, combined with a smaller number of parts per wafer, limits the availability of low-on-state-resistance, high-voltage MOSFETs. A change in the horizontal geometry of the MOSFET can lower the specific on-state resistance per unit area. By using more channel width with smaller source cells placed closer together, a reduction in on-state resistance can be achieved. A limitation on how close these cells can be placed arises from a possible localization of field concentrations that will limi.