AM80610-030 - STMicroelectronics

AM80610-030 RF & MICROWAVE TRANSISTORS

The AM80610-030 is a high power, common base NPN silicon bipolar device optimized for CW operation in the 620 - 960 MHz frequency range. AM80610-030 utilizes a rugged, overlay, emitterballasted L-Band die geometry to achieve high gain and collector efficiency and is suitable for driver or output stage use in Class C power amplifiers. Typical applications inc.

Features

* Device Current
* (TC ≤ 50°C) 57 3.0 32 200 − 65 to +200 W A V °C °C Collector-Supply Voltage
* Junction Temperature Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance
* 2.6 °C/W
*Applies only to rated RF amplifier operation AM80610-030 ELECTRICAL SPECIFICATIONS (T case = 25°C) STATIC Symbo l T est Con ditio ns Value Min. Typ . Max. Un it BVCBO BVEBO BVCER ICES hFE IC = 20 mA IE = 2 mA IC = 40 mA VBE = 0 V VCE = 5 V IE = 0 mA IC = 0 mA RBE = 10 Ω VCE = 28 V IC = 2 A 55 3.5 55 — 15 — — — — — — — — 10 150 V V V mA — DYNAMIC Symbo l Test Con dition s Value Mi.