(PDL129) The Am29PDL129H is a 128 Mbit, 3.0 volt-only Page Mode and Simultaneous Read/Write Flash memory device organized as 8 Mwords. The word-wide data (x16) appears on DQ15-DQ0. This device can be programmed in-system or in standard EPROM programmers. A 12.0 V VPP is not required for write or erase operations. The device offers fast page access time of 25.
ARCHITECTURAL ADVANTAGES
■ 128 Mbit Page Mode device
— Page size of 8 words: Fast page read access from random locations within the page
■ Both top and bottom boot blocks in one device
■ Manufactured on 0.13 µm process technology
■ 20-year data retention at 125°C
■ Minimum 1 million erase cycle guarantee per sector
PERFORMANCE CHARACTERISTICS
■ High Performance
— Page access times as fast as 30 ns — Random access times as fast as 70 ns
■ Dual Chip Enable inputs (PDL129 only)
— Two CE inputs control selection of each half of the memory space
■ Single power supply operation
— Full Voltage ra.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AM75PDL191CHH |
AMD |
(AM75PDL191CHH / AM75PDL193CHH) Simultaneous Read/Write Flash Memory | |
2 | AM75PDL191CHHA |
SPANSION |
Simultaneous Read/Write Flash Memory | |
3 | AM75PDL193BHHA |
AMD |
(AM75PDL191BHHA / AM75PDL193BHHA) Simultaneous Read/Write Flash Memory | |
4 | AM75PDL193CHH |
AMD |
(AM75PDL191CHH / AM75PDL193CHH) Simultaneous Read/Write Flash Memory | |
5 | AM75PDL193CHHA |
SPANSION |
Simultaneous Read/Write Flash Memory | |
6 | AM7500C |
Analog Power |
N & P-Channel MOSFET | |
7 | AM7510C |
Analog Power |
MOSFET | |
8 | AM7530C |
Analog Power |
N & P-Channel MOSFET | |
9 | AM7540C |
Analog Power |
P & N-Channel MOSFET | |
10 | AM7542C |
Analog Power |
N & P-Channel MOSFET | |
11 | AM7560C |
Analog Power |
N & P-Channel MOSFET | |
12 | AM75DL9608HG |
AMD |
Simultaneous Operation Flash Memories |