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AM7000N - Analog Power

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AM7000N N-Channel MOSFET

Analog Power N-Channel 200-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • PoE PSE and PD Circuits • LED Inverter Circuits • 48V-Input DC/DC Conversion Circuits AM7000N VDS (V) 200 PRODUCT SUMMARY rDS(on) (mΩ) 295 @ VGS = 10V 340 @ VGS = 5.5V ID (A) 3 2.7 DFN3x3-8L ABSO.

Features


• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed Typical Applications:
• PoE PSE and PD Circuits
• LED Inverter Circuits
• 48V-Input DC/DC Conversion Circuits AM7000N VDS (V) 200 PRODUCT SUMMARY rDS(on) (mΩ) 295 @ VGS = 10V 340 @ VGS = 5.5V ID (A) 3 2.7 DFN3x3-8L ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 200 Gate-Source Voltage VGS ±20 Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a TA=25°C TA=70°C ID IDM IS 3 2.2 20 4.6 Power Dissip.

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