AM6003 - AiT Semiconductor

AM6003 3A N-CH MOSFET

The AM6003 is available in SOT-23 Package BVDSS RDSON ID 60V 78mΩ 3A FEATURE  Super Low Gate Charge  RDS(ON) = 78mΩ(Typ.) @VGS=10V  Excellent CdV/dt effect decline  Advanced high cell density Trench technology APPLICATION  Small Power Switching and Load Switching applications PIN DESCRIPTION ORDERING INFORMATION Package Type Part Number SOT.

Features

VGS @ 10V (1) ID@TA=70℃ 1.8 A Pulsed Drain Current (2) IDM 9.2 A Total Power Dissipation (3) PD@TA=25℃ 1 W Storage Temperature Range TSTG -55 to 150 ℃ Operating Junction Temperature Range TJ -55 to 150 ℃ Thermal Resistance Junction-Ambient (1) 125 Rθ J A Thermal Resistance Junction-Case (1) 80 °C/W Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum rating cond.