AM50P02-09D - Analog Power

AM50P02-09D P-Channel MOSFET

Analog Power P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWMDC-DC converters, power management in portable and battery-powered products such as compute.

Features

rent (Diode Conduction)a Power Dissipationa Operating Junction and Storage Temperature Range VDS VGS TA=25oC ID IDM -20 V ±12 18 A ±100 IS -30 A TA=25oC PD 70 W TJ, Tstg -55 to 175 oC THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Ambienta RθJA Maximum Junction-to-Case RθJC Maximum 30 1.8 Units oC/W oC/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature January, 2005 - Rev. A PRELIMINARY 1 Publication Order Number: DS-AM50P02-09_D Analog Power AM50P02-09D SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NO.