AM4409P - Analog Power

AM4409P P-Channel MOSFET

Analog Power P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWMDC-DC converters, power management in portable and battery-powered products such as compute.

Features

a Power Dissipationa VDS -20 VGS ±12 TA=25oC TA=70oC ID 10.2 8.2 IDM ±30 IS -2.3 TA=25oC TA=70oC PD 3.1 2 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 Units V A A W oC THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t <= 10 sec Steady State Symbol RθJA Maximum 50 92 Units oC/W oC/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature November, 2003 - Rev. A PRELIMINARY 1 Publication Order Number: DS-AM4409_F Analog Power AM4409P SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE N.