Analog Power P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, cellular and cordless telep.
TA=25oC TA=70oC PD 1.25 W 0.8 TJ, Tstg -55 to 150 oC THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t <= 5 sec Steady-State Symbol RTHJA Maximum 100 150 Units oC/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 PRELIMINARY Publication Order Number: DS-AM2309P_A Analog Power AM2309P SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED) Parame te r Symbol Test Conditions Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain CurrentA Drain-Source On-ResistanceA Fo.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AM2309A |
AiT Semiconductor |
60V 2A P-CHANNEL ADVANCED POWER MOSFET | |
2 | AM2300 |
AXElite |
N-Channel Enhancement Mode MOSFET | |
3 | AM2300 |
AiT Semiconductor |
20V N-CHANNEL ENHANCEMENT MODE MOSFET | |
4 | AM2300N |
Analog Power |
N-Channel MOSFET | |
5 | AM2301 |
Aosong |
Digital temperature and humidity sensor | |
6 | AM2301 |
AXElite |
P-Channel Enhancement Mode MOSFET | |
7 | AM2301 |
AiT Semiconductor |
-20V P-CHANNEL ENHANCEMENT MODE MOSFET | |
8 | AM2301P |
Analog Power |
P-Channel MOSFET | |
9 | AM2301PE |
Analog Power |
P-Channel 20-V (D-S) MOSFET | |
10 | AM2302 |
Aosong |
Digital temperature and humidity sensor | |
11 | AM2302 |
AXElite |
N-Channel Enhancement Mode MOSFET | |
12 | AM2302 |
ETC |
Digital relative humidity & temperature emperature sensor |