AM2009 - National Semiconductor

AM2009 six channel MOS multiplex switches

The AM2009/AM2009C/MM4504/MM5504 are six channel multiplex switches constructed on a single silicon chip using low threshold P-channel MOS process. The gate of each MOS device is protected by a diode circuit. Features Typical low "on" resistance Typical low "off" leakage Typical large analog voltage range Zero inherent offset voltage Normally off with zero.

Features

Typical low "on" resistance Typical low "off" leakage Typical large analog voltage range Zero inherent offset voltage Normally off with zero gate voltage 150S2 100 pA ±10V The AM2009/AM2009C/MM4504/MM5504 are de- signed for applications such as time division multiplexing of analog or digital signals. Switching speeds are primarly determined by conditions external to the device such as signal source impedance, capacitive loading and the total number of channels used in parallel. The AM2009/MM4504 are specified for operation over the -55°C to + 125°C military temperature range. The AM2009C/MM5.