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AG 12A … AG 12M Silicon Rectifier Cells with polysiloxan passivation Silizium-Gleichrichterzellen mit Polysiloxan-Passivierung Nominal current – Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung Weight approx. – Gewicht ca. Dimensions / Maße in mm 12 A 50…1000 V 0.3 g Standard packaging bulk Standard Lieferform lose Maximum ratin.
welle Rating for fusing
– Grenzlastintegral, t < 10 ms Operating junction temperature
– Sperrschichttemperatur Storage temperature
– Lagerungstemperatur Forward voltage Durchlaßspannung Leakage current
– Sperrstrom Tj = 25/C Tj = 25/C
IFAV IFRM IFSM i2t Tj TS
IF = 12 A VR = VRRM
VF IR
1
400
) Max. temperature of the terminals TT = 100/C
– Max. Temperatur der Kontaktflächen TT = 100/C 28.02.2002
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | AG1280 |
Aaron zhang |
Low power and low cost CPLD |
|
| 2 | AG12864A |
ETC |
128 DOTS X 64 DOTS Display |
|
| 3 | AG12864A |
ETC |
LCD |
|
| 4 | AG12864EFIQB-H |
AMPIRE |
LCD MODULE |
|
| 5 | AG12A |
Diotec Semiconductor |
Silicon Rectifier Cells with polysiloxan passivation |
|
| 6 | AG12B |
Diotec Semiconductor |
Silicon Rectifier Cells with polysiloxan passivation |
|
| 7 | AG12D |
Diotec Semiconductor |
Silicon Rectifier Cells with polysiloxan passivation |
|
| 8 | AG12G |
Diotec Semiconductor |
Silicon Rectifier Cells with polysiloxan passivation |
|
| 9 | AG12K |
Diotec Semiconductor |
Silicon Rectifier Cells with polysiloxan passivation |
|
| 10 | AG12M |
Diotec Semiconductor |
Silicon Rectifier Cells with polysiloxan passivation |
|
| 11 | AG101 |
WJ Communication |
High Dynamic Range Gain Block |
|
| 12 | AG101 |
TriQuint Semiconductor |
GaAs MMIC Gain Block |
|