AFN3414AS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applicat.
20V/4.0A,RDS(ON)=35mΩ@VGS=4.5V
20V/3.2A,RDS(ON)=45mΩ@VGS=2.5V
20V/2.6A,RDS(ON)=65mΩ@VGS=1.8V
Super high density cell design for extremely
low RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-23 package design
Application
Portable Equipment
Battery Powered System
Net Working System
Pin Define
Pin 1 2 3
Symbol G S D
Description Gate Source Drain
Ordering Information
Part Ordering No.
Part Marking
Package
AFN3414ASS23RG
14YW
SOT-23
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AFN3414A |
Alfa-MOS |
N-Channel MOSFET | |
2 | AFN3410 |
Alfa-MOS |
N-Channel MOSFET | |
3 | AFN3416 |
Alfa-MOS |
N-Channel Enhancement Mode MOSFET | |
4 | AFN3416AS |
Alfa-MOS |
N-Channel MOSFET | |
5 | AFN3400A |
Alfa-MOS |
N-Channel MOSFET | |
6 | AFN3400AS |
Alfa-MOS |
N-Channel MOSFET | |
7 | AFN3400S |
Alfa-MOS |
N-Channel Enhancement Mode MOSFET | |
8 | AFN3402A |
Alfa-MOS |
N-Channel MOSFET | |
9 | AFN3402AS |
Alfa-MOS |
N-Channel MOSFET | |
10 | AFN3404AS |
Alfa-MOS |
N-Channel MOSFET | |
11 | AFN3404S |
Alfa-MOS |
N-Channel Enhancement Mode MOSFET | |
12 | AFN3406AS |
Alfa-MOS |
N-Channel MOSFET |