AFN2326S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applicati.
150V/1.5A,RDS(ON)=320mΩ@VGS=10V
150V/1.4A,RDS(ON)=340mΩ@VGS=6V
Super high density cell design for extremely
low RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-23-3L package design
Application
DC/DC Converters
Load Switch
LED Backlighting in LCD TVs
Pin Define
Pin 1 2 3
Symbol G S D
Description Gate Source Drain
Ordering Information
Part Ordering No.
Part Marking
Package
AFN2326SS23RG
26SYW
SOT-23-3L
※ 26S parts code
※ Y year .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AFN2326BS |
Alfa-MOS |
N-Channel Enhancement Mode MOSFET | |
2 | AFN2324A |
Alfa-MOS |
N-Channel MOSFET | |
3 | AFN2324BA |
Alfa-MOS |
N-Channel MOSFET | |
4 | AFN2302AS |
Alfa-MOS |
N-Channel MOSFET | |
5 | AFN2304AS |
Alfa-MOS |
N-Channel MOSFET | |
6 | AFN2306A |
Alfa-MOS |
N-Channel MOSFET | |
7 | AFN2306AE |
Alfa-MOS |
N-Channel MOSFET | |
8 | AFN2308A |
Alfa-MOS |
N-Channel MOSFET | |
9 | AFN2312A |
Alfa-MOS |
N-Channel MOSFET | |
10 | AFN2316A |
Alfa-MOS |
N-Channel MOSFET | |
11 | AFN2318A |
Alfa-MOS |
N-Channel MOSFET | |
12 | AFN2330 |
Alfa-MOS |
N-Channel Enhancement Mode MOSFET |