ADM90N03E - ADV

ADM90N03E N-Channel MOSFET

ADV ADM90N03E N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 30V ID 90A RDS(ON) (mΩ) 4.0mΩ TO252 2 1 2 3 Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed ) Symbol Parameter Common Ratings VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range .

Features

n/off Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) gFS Gate Threshold Voltage Gate Leakage Current Drain-SourceOn-stateResistance⑵ Forward transconductance⑵ VGS=0V, IDS=250uA VDS= 24V, VGS=0V VDS=30V, VGS=0V TJ=55°C VDS=VGS, IDS=250uA VGS=±20V, VDS=0V VGS= 10V, IDS=30A VDS= 5V, IDS=30A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VGS=0V, VDS= 15V, Frequency=1.0MHz Switching Characteristics td(ON) Turn-on Delay Time⑴ tr Turn-on Rise Time⑴ td(OFF) Tu.