ADM12N03S - ADV

ADM12N03S N-Channel MOSFET

ADV ADM12N03S N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 30V ID 12A RDS(ON) (mΩ) 9.0mΩ SOP-8 S D S D S D G D Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed ) Symbol Parameter Common Ratings VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Te.

Features

conditions On/off Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) gFS Gate Threshold Voltage Gate Leakage Current Drain-SourceOn-stateResistance⑵ Forward transconductance⑵ VGS=0V, IDS=250uA VDS= 24V, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=VGS, IDS=250uA VGS=±20V, VDS=0V VGS= 10V, IDS=10A VDS= 5V, IDS=10A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VGS=0V, VDS= 15V, Frequency=1.0MHz Switching Characteristics td(ON) Turn-on Delay Time⑴ tr Turn-on Rise Time⑴.