ACS03MS - Intersil Corporation

ACS03MS Radiation Hardened Quad 2-Input NAND Gate

ACS03MS January 1996 Radiation Hardened Quad 2-Input NAND Gate with Open Drain Features Pinouts • Devices QML Qualified in Accordance with MIL-PRF-38535 • Detailed Electrical and Screening Requirements are Contained in SMD# 5962-96703 and Intersil’s QM Plan • 1.25 Micron Radiation Hardened SOS CMOS • Total Dose . . . ..

Features

Pinouts
• Devices QML Qualified in Accordance with MIL-PRF-38535
• Detailed Electrical and Screening Requirements are Contained in SMD# 5962-96703 and Intersil’s QM Plan
• 1.25 Micron Radiation Hardened SOS CMOS
• Total Dose . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >300K RAD (Si)
• Single Event Upset (SEU) Immunity: <1 x 10-10 Errors/Bit/Day (Typ)
• SEU LET Threshold . . . . . . . . . . . . . . . . . . . . . . . >100 MEV-cm2/mg
• Dose Rate Upset . . . . . . . . . . . . . . . . >1011 RAD (Si)/s, 20ns Pulse
• Dose Rate Survivability . . . . . . . . . . . >1012 RAD (Si)/s,.