ACE3400 - ACE Technology

ACE3400 N-Channel Enhancement Mode MOSFET

N-Channel Enhancement Mode MOSFET The ACE3400 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and note.

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• 30V/5.4A, RDS(ON)=38mΩ@VGS=10V 30V/4.6A, RDS(ON)=42mΩ@VGS=4.5V 30V/3.8A, RDS(ON)=55mΩ@VGS=2.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design Application Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter Absolute Maximum Ratings Symbol Max Unit VDSS 30 V VGSS ±20 V TA=25℃ 4.5 Continuous Drain Current (TJ=150℃) A ID TA=70℃ 3.5 Pulsed Drain Current IDM 25 A Continuous Source Current (Diode Conductio.