AA038P2-00 - Alpha Industries

AA038P2-00 37-40 GHz GaAs MMIC Driver Amplifier

Alpha’s two-stage reactively-matched 37–40 GHz GaAs MMIC driver amplifier has typical small signal gain of 13 dB with a typical P1 dB of 14 dBm at 38 GHz. The chip uses Alpha’s proven 0.25 µm MESFET technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability. The FETs employ surface passivation to ensur.

Features

I Single Bias Supply Operation (5 V) I 13 dB Typical Small Signal Gain I 14 dBm Typical P1 dB Output Power at 38 GHz I 0.25 µm Ti/Pd/Au Gates I 100% On-Wafer RF and DC Testing 0.000 3.050 1.525 1.413 Chip Outline 0.458 1.414 2.418 0.761 I 100% Visual Inspection to MIL-STD-883 MT 2010 0.000 Description Alpha’s two-stage reactively-matched 37
  –40 GHz GaAs MMIC driver amplifier has typical small signal gain of 13 dB with a typical P1 dB of 14 dBm at 38 GHz. The chip uses Alpha’s proven 0.25 µm MESFET technology, and is based upon MBE layers and electron beam lithography for the highest unifor.