A5G26H605W19N - NXP

A5G26H605W19N Airfast RF Power GaN Transistor

A5G26H605W19N Airfast RF Power GaN Transistor Rev. 1 — 21 December 2023 This 85 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690 MHz. This part is characterized and performance is guaranteed for applications op.

Features

• High terminal impedances for optimal broadband performance
• Advanced high performance in−package Doherty
• Improved linearized error vector magnitude with next generation signal
• Able to withstand extremely high output VSWR and broadband operating conditions
• Plastic package Product data sheet A5G26H605W19N 2496
  –2690 MHz, 85 W Avg., 48 V AIRFAST RF POWER GaN TRANSISTOR OM−780−4S4S PLASTIC VBWinA/VGSA 1 RFinA/VGSA 2 Carrier 8 VBWoutA 7 RFoutA/VDSA RFinB/VGSB 3 6 RFoutB/VDSB NC 4 Peaking 5 NC (Top view) Note: Exposed backside of the package is the source terminal for the transist.