A35H1516M - Mitsubishi Electric Semiconductor

A35H1516M RA35H1516M

The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to 162-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The ou.

Features

• Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)
• Pout>40W, ηT>50% @ VDD=12.5V, VGG=5V, Pin=50mW
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power 1 4 5 1 2 3 4 5 RF Input (Pin) Gate Voltage (VGG), Power Control Drain Voltage (VDD), Battery RF Output (Pout) RF Ground (Case) ORDERING INFORMATION: ORDER NUMBER RA35H1516M-E01 RA35H1516M-01 (Japan - packed without desiccator) SUPPLY FORM Antistat.