A28F010 - Intel Corporation

A28F010 1024K (128K x 8) CMOS FLASH MEMORY

Symbol A0 –A16 DQ0 –DQ7 Type INPUT INPUT OUTPUT Name and Function ADDRESS INPUTS for memory addresses Addresses are internally latched during a write cycle DATA INPUT OUTPUT Inputs data during memory write cycles outputs data during memory read cycles The data pins are active high and float to tri-state OFF when the chip is deselected or the outputs are disa.

Features

g 10% VCC Tolerance Maximum Latch-Up Immunity through EPI Processing ETOX TM III Flash Nonvolatile Memory Technology EPROM-Compatible Process Base High-Volume Manufacturing Experience JEDEC-Standard Pinouts 32-Pin Plastic DIP 32-Lead PLCC (See Packaging Spec Order 231369) Y Y Y Y Y Y Y Y Y Intel’s 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for read write random access nonvolatile memory The 28F010 adds electrical chip-erasure and reprogramming to familiar EPROM technology Memory contents can be rewritten in a test socket in a PROM-programmer socke.