A2017 - ROHM

A2017 Power Transistor

Transistors Power Transistor (−80V, −4A) 2SA2017 !Features 1) Low VCE(sat). (Typ. –0.3V at IC/IB = −2 / −0.2A) 2) Excellent DC current gain characteristics. 3) Pc = 30W (Tc = 25°C) 4) Wide SOA (safe operating area). 5) Complements the 2SC5574. !Absolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base vol.

Features

1) Low VCE(sat). (Typ.
  –0.3V at IC/IB = −2 / −0.2A) 2) Excellent DC current gain characteristics. 3) Pc = 30W (Tc = 25°C) 4) Wide SOA (safe operating area). 5) Complements the 2SC5574. !Absolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits -80 -80 -5 -4 -6 30 150 -55~+150 Unit V V V A A(Pulse) W(Tc = 25°C) °C °C 2SA2017 !Packaging specifications and hFE Type Package hFE Code Basic ordering unit (.