A1972 - Toshiba Semiconductor

A1972 2SA1972

www.DataSheet.co.kr 2SA1972 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1972 High-Voltage Switching Applications Unit: mm • High breakdown voltage: VCEO = −400 V Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation J.

Features

he Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2009-12-21 Datasheet pdf - http://www.DataSheet4U.net/ Free Datasheet http://www.Datasheet4U.com www.DataSheet.co.kr 2SA1972 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacita.