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A1942 - Toshiba Semiconductor

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A1942 2SA1942

2SA1942 TOSHIBA Transistor Silicon PNP Triple Diffused Type www.DataSheet4U.com 2SA1942 Power Amplifier Applications • • • High breakdown voltage: VCEO = −160 V (min) Complementary to 2SC5199 Recommended for 80-W high-fidelity audio frequency amplifier output stage Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collec.

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the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-09 2SA1942 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Symbol ICBO IEBO V (BR) CEO hFE (1) DC current gain (Note) hFE (2) Collector-emitter saturation voltage Base-emitter voltage Transition frequency Colle.

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